TK58A06N1,S4X
Part NoTK58A06N1,S4X
ManufacturerToshiba Semiconductor and Storage
DescriptionMOSFET N-CH 60V 58A TO220SIS
Datasheet
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ECAD Module
Specification
PackageTube
SeriesU-MOSVIII-H
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C58A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)5.4mOhm @ 29A, 10V
RdsOn(Max)@Id4V @ 500µA
Vgs46 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3400 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3687
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1136 | |
| 10 | 1.0913 | |
| 100 | 1.0579 | |
| 1000 | 1.0245 | |
| 10000 | 0.98 |
Associated Product
