TPCC8105,L1Q
Part NoTPCC8105,L1Q
ManufacturerToshiba Semiconductor and Storage
DescriptionPB-F POWER MOSFET TRANSISTOR TSO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesU-MOSVI
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C23A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)7.8mOhm @ 11.5A, 10V
RdsOn(Max)@Id2V @ 500µA
Vgs76 nC @ 10 V
Vgs(th)(Max)@Id+20V, -25V
Vgs(Max)3240 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature700mW (Ta), 30W (Tc)
PowerDissipation(Max)150°C
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case8-TSON Advance (3.3x3.3)
GateCharge(Qg)(Max)@Vgs8-VDFN Exposed Pad
Grade
Qualification
In Stock:
7665
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7347 | |
| 10 | 0.72 | |
| 100 | 0.698 | |
| 1000 | 0.6759 | |
| 10000 | 0.6465 |
Associated Product
