TRS4E65F,S1Q
Part NoTRS4E65F,S1Q
ManufacturerToshiba Semiconductor and Storage
DescriptionDIODE SIL CARB 650V 4A TO220-2L
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)4A
Voltage-Forward(Vf)(Max)@If1.6 V @ 4 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)0 ns
Current-ReverseLeakage@Vr20 µA @ 650 V
Capacitance@Vr16pF @ 650V, 1MHz
FThrough Hole
MountingTypeTO-220-2
Package/CaseTO-220-2L
SupplierDevicePackage175°C (Max)
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
3776
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.2504 | |
| 10 | 2.2054 | |
| 100 | 2.1379 | |
| 1000 | 2.0704 | |
| 10000 | 1.9804 |
Associated Product
