TRS8E65F,S1Q
Part NoTRS8E65F,S1Q
ManufacturerToshiba Semiconductor and Storage
DescriptionDIODE SIL CARB 650V 8A TO220-2L
Datasheet
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Specification
PackageTube
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)8A
Voltage-Forward(Vf)(Max)@If1.6 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)0 ns
Current-ReverseLeakage@Vr40 µA @ 650 V
Capacitance@Vr28pF @ 650V, 1MHz
FThrough Hole
MountingTypeTO-220-2
Package/CaseTO-220-2L
SupplierDevicePackage175°C (Max)
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
4940
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 3.066 | |
10 | 3.0047 | |
100 | 2.9127 | |
1000 | 2.8207 | |
10000 | 2.6981 |