TRS8E65H,S1Q
Part NoTRS8E65H,S1Q
ManufacturerToshiba Semiconductor and Storage
DescriptionG3 SIC-SBD 650V 8A TO-220-2L
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage-DCReverse(Vr)(Max)650 V
Current-AverageRectified(Io)8A
Voltage-Forward(Vf)(Max)@If1.35 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)0 ns
Current-ReverseLeakage@Vr90 µA @ 650 V
Capacitance@Vr520pF @ 1V, 1MHz
FThrough Hole
MountingTypeTO-220-2
Package/CaseTO-220-2L
SupplierDevicePackage175°C
OperatingTemperature-Junction-
Grade-
Qualification
In Stock:
9155
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.8428 | |
| 10 | 2.7859 | |
| 100 | 2.7007 | |
| 1000 | 2.6154 | |
| 10000 | 2.5017 |
Associated Product
