TP65H050G4BS
Part NoTP65H050G4BS
ManufacturerTransphorm
Description650 V 34 A GAN FET
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSuperGaN®
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C34A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)60mOhm @ 22A, 10V
RdsOn(Max)@Id4.8V @ 700µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1000 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature119W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20453
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 14.1702 | |
| 10 | 13.8868 | |
| 100 | 13.4617 | |
| 1000 | 13.0366 | |
| 10000 | 12.4698 |
Associated Product
