2N6661JTVP02
Part No2N6661JTVP02
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 90V 860MA TO39
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)90 V
Current-ContinuousDrain(Id)@25°C860mA (Tc)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)4Ohm @ 1A, 10V
RdsOn(Max)@Id2V @ 1mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)50 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature725mW (Ta), 6.25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-39
SupplierDevicePackageTO-205AD, TO-39-3 Metal Can
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2677
available for immediate sale in a store
available for immediate sale in a store
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Associated Product
