IRF640L

Part NoIRF640L

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 18A I2PAK

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)200 V

Current-ContinuousDrain(Id)@25°C18A (Tc)

DriveVoltage(MaxRdsOn180mOhm @ 11A, 10V

MinRdsOn)4V @ 250µA

RdsOn(Max)@Id70 nC @ 10 V

Vgs1300 pF @ 25 V

Vgs(th)(Max)@Id-

Vgs(Max)3.1W (Ta), 130W (Tc)

InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)

FETFeatureThrough Hole

PowerDissipation(Max)I2PAK

OperatingTemperatureTO-262-3 Long Leads, I2PAK, TO-262AA

MountingType10V

SupplierDevicePackage±20V

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

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