IRF640LPBF

Part NoIRF640LPBF

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 18A TO262-3

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)200 V

Current-ContinuousDrain(Id)@25°C18A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)180mOhm @ 11A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs70 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)1300 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature3.1W (Ta), 130W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeTO-262-3

SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 14642
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