IRFBC20LPBF

Part NoIRFBC20LPBF

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 2.2A TO262-3

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)600 V

Current-ContinuousDrain(Id)@25°C2.2A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)4.4Ohm @ 1.3A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs18 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)350 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature3.1W (Ta), 50W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeTO-262-3

SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

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