IRFI830G
Part NoIRFI830G
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 3.1A TO220-3
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C3.1A (Tc)
DriveVoltage(MaxRdsOn1.5Ohm @ 1.9A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id38 nC @ 10 V
Vgs610 pF @ 25 V
Vgs(th)(Max)@Id-
Vgs(Max)Through Hole
InputCapacitance(Ciss)(Max)@VdsTO-220-3
FETFeatureTO-220-3 Full Pack, Isolated Tab
PowerDissipation(Max)10V
OperatingTemperature±20V
MountingType35W (Tc)
SupplierDevicePackage-55°C ~ 150°C (TJ)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
10224
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
