IRFIB5N65A

Part NoIRFIB5N65A

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 5.1A TO220-3

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)650 V

Current-ContinuousDrain(Id)@25°C5.1A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)930mOhm @ 3.1A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs48 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)1417 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature60W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureThrough Hole

MountingTypeTO-220-3

SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 19157
available for immediate sale in a store

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