SI2301BDS-T1-E3
Part NoSI2301BDS-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 2.2A SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C2.2A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)100mOhm @ 2.8A, 4.5V
RdsOn(Max)@Id950mV @ 250µA
Vgs10 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)375 pF @ 6 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature700mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
25466
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.396 | |
| 10 | 0.3881 | |
| 100 | 0.3762 | |
| 1000 | 0.3643 | |
| 10000 | 0.3485 |
Associated Product
