SI4100DY-T1-E3
Part NoSI4100DY-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 6.8A 8SO
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C6.8A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)63mOhm @ 4.4A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)600 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19231
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.27 | |
| 10 | 1.2446 | |
| 100 | 1.2065 | |
| 1000 | 1.1684 | |
| 10000 | 1.1176 |
Associated Product
