SI4102DY-T1-GE3

SI4102DY-T1-GE3

Part NoSI4102DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 3.8A 8SO
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ECAD Module SI4102DY-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C3.8A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)158mOhm @ 2.7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs11 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)370 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.4W (Ta), 4.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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Shipping Information
Shiped FromShenZhen Warehourse
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Associated Product