SI4153DY-T1-GE3
Part NoSI4153DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 30-V (D-S) MOSFET SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen III
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C14.3A (Ta), 19.3A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)9.5mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs93 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)3600 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.1W (Ta), 5.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2814
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7383 | |
| 10 | 0.7235 | |
| 100 | 0.7014 | |
| 1000 | 0.6792 | |
| 10000 | 0.6497 |
Associated Product
