SI4160DY-T1-GE3
Part NoSI4160DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 25.4A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C25.4A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)4.9mOhm @ 15A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs54 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2071 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 5.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
21951
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.17 | |
| 10 | 1.1466 | |
| 100 | 1.1115 | |
| 1000 | 1.0764 | |
| 10000 | 1.0296 |
Associated Product
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