SI4505DY-T1-GE3
Part NoSI4505DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N/P-CH 30V/8V 6A 8SOIC
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V, 8V
Current-ContinuousDrain(Id)@25°C6A, 3.8A
RdsOn(Max)@Id18mOhm @ 7.8A, 10V
Vgs1.8V @ 250µA
Vgs(th)(Max)@Id20nC @ 5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.2W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC (0.154, 3.90mm Width)
Package/Case8-SOIC
SupplierDevicePackage
Grade
Qualification
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available for immediate sale in a store
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Associated Product
