SI4752DY-T1-GE3

Part NoSI4752DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 25A 8SO

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Specification

PackageTape & Reel (TR)

SeriesSkyFET®, TrenchFET®

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)30 V

Current-ContinuousDrain(Id)@25°C25A (Tc)

DriveVoltage(MaxRdsOn4.5V, 10V

MinRdsOn)5.5mOhm @ 10A, 10V

RdsOn(Max)@Id2.2V @ 1mA

Vgs43 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)1700 pF @ 15 V

InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Body)

FETFeature3W (Ta), 6.25W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingType8-SOIC

SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 8088
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