SI4890DY-T1-E3
Part NoSI4890DY-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 11A 8-SOIC
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C11A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)12mOhm @ 11A, 10V
RdsOn(Max)@Id800mV @ 250µA (Min)
Vgs20 nC @ 5 V
Vgs(th)(Max)@Id±25V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18052
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2928 | |
| 10 | 1.2669 | |
| 100 | 1.2282 | |
| 1000 | 1.1894 | |
| 10000 | 1.1377 |
Associated Product
