SI4890DY-T1-GE3
Part NoSI4890DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 11A 8-SOIC
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C11A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)12mOhm @ 11A, 10V
RdsOn(Max)@Id800mV @ 250µA (Min)
Vgs20 nC @ 5 V
Vgs(th)(Max)@Id±25V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.5W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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Associated Product
