SI5402DC-T1-GE3
Part NoSI5402DC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 4.9A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C4.9A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)35mOhm @ 4.9A, 10V
RdsOn(Max)@Id1V @ 250µA (Min)
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.3W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature1206-8 ChipFET™
MountingType8-SMD, Flat Lead
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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available for immediate sale in a store
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Associated Product
