SI5410DU-T1-GE3
Part NoSI5410DU-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 12A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)18mOhm @ 6.6A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1350 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.1W (Ta), 31W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® ChipFET™ Single
SupplierDevicePackagePowerPAK® ChipFET™ Single
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
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available for immediate sale in a store
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Associated Product
