SI5471DC-T1-GE3
Part NoSI5471DC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 6A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)20mOhm @ 9.1A, 4.5V
RdsOn(Max)@Id1.1V @ 250µA
Vgs96 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)2945 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 6.3W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case1206-8 ChipFET™
GateCharge(Qg)(Max)@Vgs8-SMD, Flat Lead
Grade
Qualification
In Stock:
9679
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6624 | |
| 10 | 0.6492 | |
| 100 | 0.6293 | |
| 1000 | 0.6094 | |
| 10000 | 0.5829 |
Associated Product
