SI5908DC-T1-GE3
Part NoSI5908DC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 20V 4.4A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C4.4A
RdsOn(Max)@Id40mOhm @ 4.4A, 4.5V
Vgs1V @ 250µA
Vgs(th)(Max)@Id7.5nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds1.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SMD, Flat Lead
Package/Case1206-8 ChipFET™
SupplierDevicePackage-
Grade-
Qualification
In Stock:
10618
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3433 | |
| 10 | 1.3164 | |
| 100 | 1.2761 | |
| 1000 | 1.2358 | |
| 10000 | 1.1821 |
Associated Product
