SI6473DQ-T1-GE3
Part NoSI6473DQ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 6.2A 8TSSOP
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C6.2A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)12.5mOhm @ 9.5A, 4.5V
RdsOn(Max)@Id450mV @ 250µA (Min)
Vgs70 nC @ 5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.08W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-TSSOP
MountingType8-TSSOP (0.173, 4.40mm Width)
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
2932
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available for immediate sale in a store
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Associated Product
