SIA112LDJ-T1-GE3
Part NoSIA112LDJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100-V (D-S) MOSFET POW
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C3.5A (Ta), 8.8A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)14mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs11.8 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)355 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.9W (Ta), 15.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SC-70-6
GateCharge(Qg)(Max)@VgsPowerPAK® SC-70-6
Grade
Qualification
In Stock:
14911
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.552 | |
| 10 | 0.541 | |
| 100 | 0.5244 | |
| 1000 | 0.5078 | |
| 10000 | 0.4858 |
Associated Product
