SIA415DJ-T1-GE3
Part NoSIA415DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 12A PPAK SC70-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)35mOhm @ 5.6A, 4.5V
RdsOn(Max)@Id1.5V @ 250µA
Vgs47 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)1250 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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Associated Product
