SIA418DJ-T1-GE3

SIA418DJ-T1-GE3

Part NoSIA418DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 12A PPAK SC70-6
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ECAD Module SIA418DJ-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)18mOhm @ 9A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs17 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)570 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product