SIA4371EDJ-T1-GE3
Part NoSIA4371EDJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionP-CHANNEL 30-V (D-S) MOSFET POWE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C6.4A (Ta), 9A (Tc)
DriveVoltage(MaxRdsOn2.5V, 10V
MinRdsOn)45mOhm @ 3.7A, 10V
RdsOn(Max)@Id1.5V @ 250µA
Vgs35 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.9W (Ta), 15.6W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SC-70-6
GateCharge(Qg)(Max)@VgsPowerPAK® SC-70-6
Grade
Qualification
In Stock:
15192
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4182 | |
| 10 | 0.4098 | |
| 100 | 0.3973 | |
| 1000 | 0.3847 | |
| 10000 | 0.368 |
Associated Product
