SIA445EDJT-T1-GE3
Part NoSIA445EDJT-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 12A PPAK SC70-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)16.7mOhm @ 7A, 4.5V
RdsOn(Max)@Id1.2V @ 250µA
Vgs69 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)2180 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6 Single
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4135
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5593 | |
| 10 | 0.5481 | |
| 100 | 0.5313 | |
| 1000 | 0.5146 | |
| 10000 | 0.4922 |
Associated Product
