SIB900EDK-T1-GE3

SIB900EDK-T1-GE3

Part NoSIB900EDK-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 20V 1.5A SC75-6L
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ECAD Module SIB900EDK-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C1.5A
RdsOn(Max)@Id225mOhm @ 1.6A, 4.5V
Vgs1V @ 250µA
Vgs(th)(Max)@Id1.7nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds3.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-75-6L Dual
Package/CasePowerPAK® SC-75-6L Dual
SupplierDevicePackage-
Grade-
Qualification
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Shipping Information
Shiped FromShenZhen Warehourse
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Associated Product