SIDR610DP-T1-GE3
Part NoSIDR610DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 8.9A/39.6A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C8.9A (Ta), 39.6A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)31.9mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs38 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1380 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8DC
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6394
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.4874 | |
| 10 | 3.4177 | |
| 100 | 3.313 | |
| 1000 | 3.2084 | |
| 10000 | 3.0689 |
Associated Product
