SIHB11N80E-GE3

Part NoSIHB11N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 12A D2PAK

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Specification

PackageTube

SeriesE

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)800 V

Current-ContinuousDrain(Id)@25°C12A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)440mOhm @ 5.5A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs88 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)1670 pF @ 100 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature179W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-263 (D2PAK)

SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

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