SIHB33N60ET5-GE3

Part NoSIHB33N60ET5-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 33A TO263

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Specification

PackageTape & Reel (TR)

SeriesE

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)600 V

Current-ContinuousDrain(Id)@25°C33A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)99mOhm @ 16.5A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs±30V

Vgs(th)(Max)@Id-

Vgs(Max)278W (Tc)

InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)

FETFeatureSurface Mount

PowerDissipation(Max)TO-263 (D2PAK)

OperatingTemperatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

MountingType150 nC @ 10 V

SupplierDevicePackage3508 pF @ 100 V

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 4540
available for immediate sale in a store

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