SIHD1K4N60E-GE3

Part NoSIHD1K4N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 4.2A TO252AA

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ECAD Module

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Specification

PackageBulk

SeriesE

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)600 V

Current-ContinuousDrain(Id)@25°C4.2A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)1.45Ohm @ 500mA, 10V

RdsOn(Max)@Id5V @ 250µA

Vgs7.5 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)172 pF @ 100 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature63W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeDPAK

SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

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