SIHD5N80AE-GE3

Part NoSIHD5N80AE-GE3

ManufacturerVishay Siliconix

DescriptionE SERIES POWER MOSFET DPAK (TO-2

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ECAD Module

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Specification

PackageTube

SeriesE

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)800 V

Current-ContinuousDrain(Id)@25°C4.4A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)1.35Ohm @ 1.5A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs16.5 nC @ 10 V

Vgs(th)(Max)@Id±30V

Vgs(Max)321 pF @ 100 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature62.5W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-252AA

SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 3900
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