SIHFBF30S-GE3
Part NoSIHFBF30S-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CHANNEL 900V
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)900 V
Current-ContinuousDrain(Id)@25°C3.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.7Ohm @ 2.2A, 100V
RdsOn(Max)@Id4V @ 250µA
Vgs78 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1200 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16663
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.566 | |
| 10 | 1.5347 | |
| 100 | 1.4877 | |
| 1000 | 1.4407 | |
| 10000 | 1.3781 |
Associated Product
