SIHH28N60E-T1-GE3
Part NoSIHH28N60E-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 29A PPAK 8 X 8
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C29A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)98mOhm @ 14A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs129 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2614 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature202W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 8 x 8
SupplierDevicePackage8-PowerTDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4612
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.4983 | |
| 10 | 3.4283 | |
| 100 | 3.3234 | |
| 1000 | 3.2184 | |
| 10000 | 3.0785 |
Associated Product
