SIHP24N80AE-GE3
Part NoSIHP24N80AE-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 800V 21A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C21A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)184mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs89 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1836 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature208W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
3234
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.4026 | |
| 10 | 3.3345 | |
| 100 | 3.2325 | |
| 1000 | 3.1304 | |
| 10000 | 2.9943 |
Associated Product
