SIHU4N80AE-GE3
Part NoSIHU4N80AE-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 800V 4.3A IPAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C4.3A (Tc)
DriveVoltage(MaxRdsOn1.27Ohm @ 2A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id32 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id622 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds69W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageIPAK (TO-251)
Package/CaseTO-251-3 Long Leads, IPak, TO-251AB
GateCharge(Qg)(Max)@Vgs10V
Grade
Qualification
In Stock:
2792
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.798 | |
| 10 | 1.762 | |
| 100 | 1.7081 | |
| 1000 | 1.6542 | |
| 10000 | 1.5822 |
Associated Product
