![SIHU4N80E-GE3](/media/Discrete%20Semiconductor%20Products/Transistors/742%253bIPAK%28TO-251-3%29%253b%253b3.jpg)
![](/mall/image/leaves_green.webp)
SIHU4N80E-GE3
Part NoSIHU4N80E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 800V 4.3A IPAK
Datasheet
Download Now!
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C4.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.27Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)622 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature69W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeIPAK (TO-251)
SupplierDevicePackageTO-251-3 Long Leads, IPak, TO-251AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4935
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.833 | |
10 | 0.8163 | |
100 | 0.7913 | |
1000 | 0.7664 | |
10000 | 0.733 |