SIJH600E-T1-GE3

SIJH600E-T1-GE3

Part NoSIJH600E-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 60-V (D-S) 175C MOSFET
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ECAD Module SIJH600E-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C37A (Ta), 373A (Tc)
DriveVoltage(MaxRdsOn0.92mOhm @ 20A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id212 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id9950 pF @ 30 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.3W (Ta), 333W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 8 x 8
MountingTypePowerPAK® 8 x 8
SupplierDevicePackage7.5V, 10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 4007
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 5.833
10 5.7163
100 5.5413
1000 5.3664
10000 5.133
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product