SIR618DP-T1-GE3
Part NoSIR618DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 14.2A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesThunderFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C14.2A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)95mOhm @ 8A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs16 nC @ 7.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)740 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature48W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® SO-8
GateCharge(Qg)(Max)@VgsPowerPAK® SO-8
Grade
Qualification
In Stock:
5219
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3098 | |
| 10 | 1.2836 | |
| 100 | 1.2443 | |
| 1000 | 1.205 | |
| 10000 | 1.1526 |
Associated Product
