SIR626DP-T1-RE3

SIR626DP-T1-RE3

Part NoSIR626DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 60V 100A PPAK SO-8
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ECAD Module SIR626DP-T1-RE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)1.7mOhm @ 20A, 10V
RdsOn(Max)@Id3.4V @ 250µA
Vgs78 nC @ 7.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5130 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 17759
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 2.0091
10 1.9689
100 1.9086
1000 1.8484
10000 1.768
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product