SIR798DP-T1-GE3

Part NoSIR798DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 60A PPAK SO-8

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Specification

PackageTape & Reel (TR),Cut Tape (CT)

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)30 V

Current-ContinuousDrain(Id)@25°C60A (Tc)

DriveVoltage(MaxRdsOn4.5V, 10V

MinRdsOn)2.05mOhm @ 20A, 10V

RdsOn(Max)@Id2.5V @ 250µA

Vgs130 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)5050 pF @ 15 V

InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Body)

FETFeature83W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypePowerPAK® SO-8

SupplierDevicePackagePowerPAK® SO-8

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 10740
available for immediate sale in a store

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