SIRA50DP-T1-RE3
Part NoSIRA50DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 62.5A/100A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C62.5A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)1mOhm @ 20A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs194 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)8445 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 100W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2745
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4105 | |
| 10 | 1.3823 | |
| 100 | 1.34 | |
| 1000 | 1.2977 | |
| 10000 | 1.2412 |
Associated Product
