SIRA60DP-T1-RE3
Part NoSIRA60DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 100A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)0.94mOhm @ 20A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs+20V, -16V
Vgs(th)(Max)@Id7650 pF @ 15 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds57W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage125 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3803
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4872 | |
| 10 | 0.4775 | |
| 100 | 0.4628 | |
| 1000 | 0.4482 | |
| 10000 | 0.4287 |
Associated Product
