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SIRS4600DP-T1-RE3
Part NoSIRS4600DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 60 V (D-S) MOSFET POWE
Datasheet
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C58A (Ta), 334A (Tc)
DriveVoltage(MaxRdsOn7.5V, 10V
MinRdsOn)1.2mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs162 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)7655 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature7.4W (Ta), 240W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17864
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 3.6 | |
10 | 3.528 | |
100 | 3.42 | |
1000 | 3.312 | |
10000 | 3.168 |