SIS112LDN-T1-GE3
Part NoSIS112LDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100 V (D-S) MOSFET POW
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C3.5A (Ta), 8.8A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)119mOhm @ 3.5A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs11.8 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)355 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.2W (Ta), 19.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CasePowerPAK® 1212-8
GateCharge(Qg)(Max)@VgsPowerPAK® 1212-8
Grade
Qualification
In Stock:
17017
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7788 | |
| 10 | 0.7632 | |
| 100 | 0.7399 | |
| 1000 | 0.7165 | |
| 10000 | 0.6853 |
Associated Product
